Optical Port (IR)
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This page explains how Photodiode Receiver is classified within Computer, Electronic and Optical Product Manufacturing. Technical values and manufacturer relationships are research references; confirm the current specification and supplier evidence for each order.
A semiconductor device that converts infrared light signals into electrical current within an optical port system.
Technical details and manufacturing context for Photodiode Receiver
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Wavelength Range | 800–1700 nm | Typical for InGaAs photodiodes |
| Responsivity | 0.9–1.0 A/W | At 1550 nm |
| Dark Current | 0.1–5 nA | At 5 V reverse bias |
| Bandwidth | 1–10 GHz | Depends on active area |
| Active Area Diameter | 0.05–0.5 mm | Larger area reduces bandwidth |
| Operating Temperature | -40–85 °C | Extended range available |
| Storage Temperature | -55–125 °C | Non-operating |
| Reverse Breakdown Voltage | 20–100 V | Minimum |
| Capacitance | 0.5–5 pF | At 5 V reverse bias |
| Package Type | TO-46 | Other options available |
| Fiber Coupling | FC/PC | Connector type |
| Operating Humidity | 5–95 % RH | Non-condensing |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
Commonly used trade names and technical identifiers for Photodiode Receiver.
This component is essential for the following industrial systems and equipment:
| pressure: | Atmospheric to 1.5 bar |
| other spec: | Wavelength: 800-1700 nm, Responsivity: 0.8-1.0 A/W |
| temperature: | -40°C to +85°C |
Indicative industry ranges for design and RFQ preparation. Confirm the exact figures and applicable standard with the manufacturer before specifying.
Quoted from the published standard.
Manufacturer profiles associated with Photodiode Receiver.
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A practical evidence checklist for RFQ preparation and supplier evaluation.
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For InGaAs photodiodes, the typical wavelength range is 800–1700 nm, as listed in the directory. However, this is a reference range; the actual range for a specific model should be confirmed with the manufacturer.
The photodiode receiver operates on the photoelectric effect. When infrared photons hit the semiconductor junction, they generate electron-hole pairs, creating a photocurrent proportional to the light intensity. It is typically operated in reverse bias to improve sensitivity and speed.
Common materials include silicon, germanium, and indium gallium arsenide (InGaAs). Each material has different spectral response and performance characteristics, so selection depends on the application requirements.
The typical operating temperature range is -40 to 85 °C, with storage temperatures from -55 to 125 °C. These are reference values; always verify with the manufacturer for the specific model.
Editorial classification, named public sources where available, and source-reviewed manufacturer records.
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