Editorial Technical Reference

Photodiode Receiver

This page explains how Photodiode Receiver is classified within Computer, Electronic and Optical Product Manufacturing. Technical values and manufacturer relationships are research references; confirm the current specification and supplier evidence for each order.

Technical Definition & Core Assembly

A semiconductor device that converts infrared light signals into electrical current within an optical port system.

Photodiode Receiver in a manufacturing environment
Representative product image. Confirm appearance and specifications with the manufacturer.

Product Specifications

Technical details and manufacturing context for Photodiode Receiver

Definition
The photodiode receiver is a critical component of an Optical Port (IR) system, specifically designed to detect and convert incoming infrared light signals into proportional electrical current. It serves as the primary sensing element that enables data transmission, remote control functions, or proximity detection in IR-based communication systems. The device operates on the principle of the photoelectric effect: when infrared photons strike the semiconductor junction, they generate electron-hole pairs, creating a photocurrent proportional to the incident light intensity. To enhance sensitivity and response speed, the photodiode is typically operated in reverse bias mode, and the generated current is subsequently amplified and processed by downstream circuitry. The receiver is available with various semiconductor materials, including silicon, germanium, and indium gallium arsenide (InGaAs), each offering different spectral responses and performance characteristics. For InGaAs photodiodes, typical wavelength ranges span 800–1700 nm, with responsivity values of 0.9–1.0 A/W at 1550 nm. Dark current is typically 0.1–5 nA at 5 V reverse bias, and bandwidth ranges from 1–10 GHz depending on the active area, which typically has a diameter of 0.05–0.5 mm. The device operates within a temperature range of -40 to 85 °C, with storage temperatures from -55 to 125 °C. Reverse breakdown voltage is typically 20–100 V, and capacitance is 0.5–5 pF at 5 V reverse bias. Package options include TO-46, and fiber coupling is available with FC/PC connectors. Operating humidity ranges from 5–95% RH (non-condensing). These values are typical reference ranges and must be verified for the specific model and application with the legal manufacturer or supplier. The photodiode receiver is essential for ensuring reliable IR communication, and proper selection requires consideration of wavelength, responsivity, bandwidth, and environmental conditions.
Working Principle
When infrared photons strike the photodiode's semiconductor junction, they generate electron-hole pairs through the photoelectric effect. This creates a photocurrent proportional to the incident light intensity. The device operates in reverse bias mode to enhance sensitivity and response speed, with the generated current being amplified and processed by subsequent circuitry.
Common Materials
Silicon, Germanium, Indium Gallium Arsenide
Technical Parameters
ParameterTypical rangeNotes & selection driver
Wavelength Range800–1700 nmTypical for InGaAs photodiodes
Responsivity0.9–1.0 A/WAt 1550 nm
Dark Current0.1–5 nAAt 5 V reverse bias
Bandwidth1–10 GHzDepends on active area
Active Area Diameter0.05–0.5 mmLarger area reduces bandwidth
Operating Temperature-40–85 °CExtended range available
Storage Temperature-55–125 °CNon-operating
Reverse Breakdown Voltage20–100 VMinimum
Capacitance0.5–5 pFAt 5 V reverse bias
Package TypeTO-46Other options available
Fiber CouplingFC/PCConnector type
Operating Humidity5–95 % RHNon-condensing

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Components / BOM
  • Semiconductor Junction Part
    Light absorption and electron-hole pair generation
    Material: Silicon/Germanium/InGaAs
  • Anti-Reflection Coating Part
    Minimizes light reflection to maximize photon absorption
    Material: Silicon Nitride/Silicon Dioxide
  • Package Window Part
    Protects the sensitive area while allowing IR transmission
    Material: Glass/Epoxy
  • Lead Frame Part
    Provides electrical connections and mechanical support
    Material: Copper Alloy

Application & selection

Application Fit & Sizing Matrix

Operational Limits
pressure: Atmospheric to 1.5 bar
other spec: Wavelength: 800-1700 nm, Responsivity: 0.8-1.0 A/W
temperature: -40°C to +85°C
Media Compatibility
✓ Fiber optic cables (SMF/MMF) ✓ Optical connectors (LC/SC/FC) ✓ IR-transmissive windows
Unsuitable: High-intensity visible light environments
Sizing Data Required
  • Optical wavelength (nm)
  • Required bandwidth (MHz)
  • Minimum detectable power (dBm)

Risk, maintenance & compliance

Reliability & Engineering Risk Analysis

Failure Mode & Root Cause
Photodiode dark current increase
Cause: Thermal degradation of semiconductor junction due to prolonged exposure to high temperatures or thermal cycling, leading to increased leakage current and reduced signal-to-noise ratio
Optical window contamination
Cause: Accumulation of dust, moisture, or chemical deposits on the optical interface, causing signal attenuation, scattering, or complete optical path obstruction
Maintenance Indicators
  • Gradual or sudden decrease in output signal amplitude despite constant input light levels
  • Visible condensation, fogging, or particulate accumulation on the optical window surface
Engineering Tips
  • Implement active temperature stabilization with Peltier coolers or heat sinks to maintain photodiode junction temperature within ±5°C of optimal operating range
  • Use dry nitrogen purging or hermetic sealing with desiccant to prevent moisture ingress and maintain clean optical paths in harsh environments

Indicative industry ranges for design and RFQ preparation. Confirm the exact figures and applicable standard with the manufacturer before specifying.

Compliance & Manufacturing Standards

Applicable Standards
IEC 60747-5-3: Semiconductor devices - Optoelectronic devices - Photodiodes CE marking: Compliance with EU EMC Directive 2014/30/EU and Low Voltage Directive 2014/35/EU

Quoted from the published standard.

Manufacturing Precision
  • Responsivity: +/-5% at specified wavelength
  • Dark current: <1 nA at rated reverse voltage
Quality Inspection
  • Spectral response test: Verify wavelength sensitivity and responsivity
  • Environmental stress test: Temperature cycling and humidity exposure per MIL-STD-883
Technical documentation
Request current drawings, revision history, and a signed specification sheet.
Manufacturing capability
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Inspection readiness
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Supplier transparency
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Manufacturers of Photodiode Receiver

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Frequently Asked Questions

What is the typical wavelength range for InGaAs photodiodes?

For InGaAs photodiodes, the typical wavelength range is 800–1700 nm, as listed in the directory. However, this is a reference range; the actual range for a specific model should be confirmed with the manufacturer.

How does the photodiode receiver operate?

The photodiode receiver operates on the photoelectric effect. When infrared photons hit the semiconductor junction, they generate electron-hole pairs, creating a photocurrent proportional to the light intensity. It is typically operated in reverse bias to improve sensitivity and speed.

What materials are used in photodiode receivers?

Common materials include silicon, germanium, and indium gallium arsenide (InGaAs). Each material has different spectral response and performance characteristics, so selection depends on the application requirements.

What are the typical operating temperature limits?

The typical operating temperature range is -40 to 85 °C, with storage temperatures from -55 to 125 °C. These are reference values; always verify with the manufacturer for the specific model.

Related equipment

Applied To / Applications

This component is essential for the following industrial systems and equipment:

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for Photodiode Receiver.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records.

Preliminary Technical Classification
This page supports structured research, RFQ preparation, and supplier evaluation. It does not replace buyer-led supplier qualification, standards review, or technical approval.

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