A diode bridge is an electronic component that converts alternating current (AC) to direct current (DC) using four diodes arranged in a bridge configuration.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Mounting Type | Through-hole (e.g., TO-220, TO-247) or surface mount (e.g., D2PAK, DPAK) | Select based on PCB assembly process and thermal dissipation requirements. |
| Peak Reverse Voltage | 100–1600 V | Must exceed maximum peak AC input voltage plus safety margin (typically 1.5–2x).IEC 60747-2 |
| Operating Temperature Range | -55 to +150 °C | Junction temperature range; derating required above 100°C.IEC 60747-2 |
| Maximum Forward Voltage Drop | 0.8–1.2 (Si), 1.5–2.0 (SiC) V | At rated current and 25°C; lower drop reduces power loss. |
| Maximum Average Rectified Current | 1–100 A | At specified case temperature (e.g., 100°C); derate at higher temperatures.IEC 60747-2 |
| Material | Silicon (Si) or Silicon Carbide (SiC) | SiC for high-temperature (>150°C) and high-frequency applications; Si for cost-sensitive. |
| Terminal Material | Copper (C11000) or aluminum (6061-T6) | Copper for higher conductivity; aluminum for weight reduction.ASTM B187 |
| Encapsulation Material | Epoxy (e.g., FR-4) or ceramic (Al2O3) | Ceramic for high thermal conductivity and high-temperature operation. |
| Isolation Voltage | 1500–4000 Vrms | Between terminals and mounting base; critical for safety isolation.IEC 60747-2 |
| Thermal Resistance (Junction to Case) | 0.5–5.0 °C/W | Lower is better for heat dissipation; depends on package and material. |
| Surge Current Capability | 50–500 A | Non-repetitive peak current for 10 ms; important for inrush conditions.IEC 60747-2 |
| Reverse Recovery Time | 20–100 (Si), <10 (SiC) ns | For high-frequency switching; SiC has faster recovery. |
| Ambient temperature | -40 to +85 °C | Outside this window: Exceeding may cause thermal runaway or solder joint failure. |
| Junction temperature | -55 to +150 °C (Si), -55 to +200 °C (SiC) | Outside this window: Exceeding leads to permanent damage or reduced lifetime. |
| Forward current (average) | Up to rated current at case temp ≤100°C | Outside this window: Exceeding causes overheating and potential failure. |
| Reverse voltage (peak) | Up to rated VRRM | Outside this window: Exceeding causes avalanche breakdown and destruction. |
| Surge current (non-repetitive) | Up to rated surge current for 10 ms | Outside this window: Exceeding may fuse the die or bond wires. |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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A diode bridge provides full-wave rectification using all AC waveform halves, while a single diode provides half-wave rectification using only one half, making bridges more efficient with higher output voltage and reduced ripple.
Standard silicon diode bridges are optimized for 50/60Hz power frequencies. For high-frequency applications, fast recovery or Schottky diode bridges with lower reverse recovery time are required.
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