Photodiode Element: Spectral Range 400-1100 nm (Si)

Component Specifications

Definition

A photodiode element is a p-n junction or PIN structure semiconductor component designed to generate photocurrent when exposed to light. It operates in photovoltaic or photoconductive mode, converting photon energy into electrical signals with high sensitivity and fast response times. In photodiode arrays, multiple elements are arranged linearly or in matrices to enable spatial light distribution analysis, spectral measurement, and imaging applications.

Working Principle

The photodiode element operates based on the photoelectric effect. When photons with sufficient energy strike the semiconductor material, they create electron-hole pairs in the depletion region. Under reverse bias (photoconductive mode) or zero bias (photovoltaic mode), these charge carriers are separated by the built-in electric field, generating a photocurrent proportional to the incident light intensity. The element's response characteristics depend on material properties, junction design, and operating conditions.

Materials

Silicon (Si) for visible to near-infrared range (400-1100 nm), Germanium (Ge) for infrared (800-1800 nm), Indium Gallium Arsenide (InGaAs) for extended infrared (900-2600 nm), or Silicon Carbide (SiC) for UV applications. Package materials include ceramic, metal, or plastic housing with optical windows (glass, quartz, or epoxy).

Technical Parameters

Parameter	Typical range	Notes & selection driver
Rise Time	1-100 ns
Active Area	0.1-100 mm²
Dark Current	1-100 nA
Responsivity	0.4-0.6 A/W
Spectral Range	400-1100 nm (Si)
Operating Voltage	5-100 V reverse bias
Temperature Range	-40°C to +85°C

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards

ISO 10110, IEC 60747-5, DIN 5031

Parent Products

This component is used in the following industrial products

Photodiode Array

A linear or two-dimensional arrangement of multiple photodiodes integrated on a single semiconductor substrate for simultaneous detection of light intensity across multiple points.

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Engineering Analysis

Risks & Mitigation

Thermal noise at high temperatures
Saturation from excessive light intensity
Damage from electrostatic discharge (ESD)
Performance degradation due to contamination on optical surface

FMEA Triads

Trigger: Excessive reverse bias voltage
Failure: Junction breakdown and permanent damage
Mitigation: Implement voltage clamping circuits and follow manufacturer's maximum ratings

Trigger: Optical window contamination
Failure: Reduced sensitivity and inaccurate measurements
Mitigation: Use cleanroom handling procedures and periodic inspection/cleaning protocols

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance

±5% responsivity variation across elements in same array, ±2nm spectral response shift

Test Method

IEC 60747-5 for photoelectric characteristics, ISO 10110 for optical specifications, MIL-STD-883 for environmental testing

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation

Request current drawings, revision history, and a signed specification sheet.

Manufacturing capability

Verify equipment lists, process limits, capacity, and representative production evidence.

Inspection readiness

Confirm test methods, calibrated equipment, sampling plans, and traceable reports.

Supplier transparency

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Manufacturers of Photodiode Element

Manufacturer profiles associated with Photodiode Element.

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Frequently Asked Questions

What is the difference between photovoltaic and photoconductive mode in photodiode elements?

In photovoltaic mode (zero bias), the photodiode generates voltage when illuminated, suitable for low-light applications. In photoconductive mode (reverse bias), it produces current proportional to light intensity, offering faster response and linearity but with higher dark current.

How does element spacing affect performance in photodiode arrays?

Closer element spacing increases spatial resolution but may cause crosstalk between adjacent elements. Typical spacing ranges from 25μm to several millimeters, balancing resolution with signal isolation requirements.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.

Preliminary Technical Classification

This page supports structured research, RFQ preparation, and supplier evaluation. It does not replace buyer-led supplier qualification, standards review, or technical approval.

Photodiode Element