A semiconductor photodiode chip that converts light signals into electrical current for optical sensing applications.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Rise Time | 1-100 ns | |
| Active Area | 0.1-100 mm² | |
| Dark Current | 1-100 nA at rated bias | |
| Responsivity | 0.4-0.6 A/W at peak wavelength | |
| Wavelength Range | 400-1100 nm (Si typical) | |
| Operating Voltage | 5-100 V reverse bias | |
| Temperature Range | -40°C to +85°C |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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A photodiode chip generates current directly from light with faster response but lower gain, while a phototransistor provides internal amplification but slower speed and higher noise.
Consider wavelength sensitivity, response speed, active area size, dark current, and packaging based on your light source, signal frequency, and environmental conditions.
Standard silicon chips detect visible to near-infrared; specialized materials like silicon carbide (SiC) for UV or mercury cadmium telluride (MCT) for far-IR are required for those ranges.
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