Photodiode elements: Breakdown Voltage 20-200 V

Component Specifications

Definition

Photodiode elements are semiconductor-based optoelectronic components that generate electrical current when exposed to light through the photoelectric effect. These elements serve as individual sensing units within photodetector arrays, converting incident photons into measurable electrical signals with specific spectral response characteristics, responsivity, and response time parameters.

Working Principle

Operates on the photoelectric effect where incident photons with sufficient energy create electron-hole pairs in the semiconductor depletion region, generating photocurrent proportional to light intensity. Reverse bias voltage enhances sensitivity and response speed by widening the depletion region and reducing junction capacitance.

Materials

Silicon (Si) for visible to near-infrared range (400-1100 nm), Germanium (Ge) for infrared (800-1800 nm), Indium Gallium Arsenide (InGaAs) for extended infrared (900-2600 nm), Silicon Carbide (SiC) for UV applications

Technical Parameters

Parameter	Typical range	Notes & selection driver
Active Area	0.1-100 mm²
Capacitance	1-100 pF
Dark Current	0.1-100 nA
Responsivity	0.3-1.2 A/W
Response Time	1 ns - 100 μs
Spectral Range	190-2600 nm (depending on material)
Breakdown Voltage	20-200 V

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards

ISO 10110-8, IEC 60747-5, DIN 58141-2

Parent Products

This component is used in the following industrial products

Photodetector array

An array of photodetectors that converts optical signals into electrical signals for position or motion detection.

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Engineering Analysis

Risks & Mitigation

Electrostatic discharge damage
Optical overexposure causing saturation or damage
Thermal runaway in high-power applications
Moisture ingress affecting performance

FMEA Triads

Trigger: Electrostatic discharge during handling
Failure: Permanent damage to semiconductor junction
Mitigation: ESD-protected workstations, proper grounding, antistatic packaging

Trigger: Excessive reverse bias voltage
Failure: Breakdown and permanent damage
Mitigation: Voltage limiting circuits, proper power supply design

Trigger: Contamination on active surface
Failure: Reduced sensitivity and measurement errors
Mitigation: Clean room assembly, protective coatings, regular maintenance

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance

±5% responsivity variation, ±2 nm spectral response shift

Test Method

IEC 60747-5 for electrical characteristics, ISO 10110-8 for optical parameters, dark current measurement at specified bias voltage

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation

Request current drawings, revision history, and a signed specification sheet.

Manufacturing capability

Verify equipment lists, process limits, capacity, and representative production evidence.

Inspection readiness

Confirm test methods, calibrated equipment, sampling plans, and traceable reports.

Supplier transparency

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Manufacturers of Photodiode elements

Manufacturer profiles associated with Photodiode elements.

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Frequently Asked Questions

What is the difference between PIN and avalanche photodiodes?

PIN photodiodes have an intrinsic region between p and n layers for better quantum efficiency, while avalanche photodiodes (APDs) use internal gain through impact ionization for higher sensitivity but require precise voltage control.

How does temperature affect photodiode performance?

Temperature increases dark current (approximately doubling every 10°C) and can shift spectral response. Thermal management is critical for precision applications.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.

Preliminary Technical Classification

This page supports structured research, RFQ preparation, and supplier evaluation. It does not replace buyer-led supplier qualification, standards review, or technical approval.

Photodiode elements