INDUSTRY COMPONENT

Photodiode elements

Semiconductor devices converting light signals into electrical current for photodetector arrays

View Specifications

Component Specifications

Definition
Photodiode elements are semiconductor-based optoelectronic components that generate electrical current when exposed to light through the photoelectric effect. These elements serve as individual sensing units within photodetector arrays, converting incident photons into measurable electrical signals with specific spectral response characteristics, responsivity, and response time parameters.
Working Principle
Operates on the photoelectric effect where incident photons with sufficient energy create electron-hole pairs in the semiconductor depletion region, generating photocurrent proportional to light intensity. Reverse bias voltage enhances sensitivity and response speed by widening the depletion region and reducing junction capacitance.
Materials
Silicon (Si) for visible to near-infrared range (400-1100 nm), Germanium (Ge) for infrared (800-1800 nm), Indium Gallium Arsenide (InGaAs) for extended infrared (900-2600 nm), Silicon Carbide (SiC) for UV applications
Technical Parameters
  • Active Area 0.1-100 mm²
  • Capacitance 1-100 pF
  • Dark Current 0.1-100 nA
  • Responsivity 0.3-1.2 A/W
  • Response Time 1 ns - 100 μs
  • Spectral Range 190-2600 nm (depending on material)
  • Breakdown Voltage 20-200 V
Standards
ISO 10110-8, IEC 60747-5, DIN 58141-2

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for Photodiode elements.

photodiode optoelectronic component light sensor semiconductor detector photodetector array optical sensor photoelectric conversion Photodiode elements Photodiode elements in Computer, Electronic and Optical Product Manufacturing

Parent Products

This component is used in the following industrial products

Photodetector array

An array of photodetectors that converts optical signals into electrical signals for position or motion detection.

View Product Details

Engineering Analysis

Risks & Mitigation
  • Electrostatic discharge damage
  • Optical overexposure causing saturation or damage
  • Thermal runaway in high-power applications
  • Moisture ingress affecting performance
FMEA Triads
Trigger: Electrostatic discharge during handling
Failure: Permanent damage to semiconductor junction
Mitigation: ESD-protected workstations, proper grounding, antistatic packaging
Trigger: Excessive reverse bias voltage
Failure: Breakdown and permanent damage
Mitigation: Voltage limiting circuits, proper power supply design
Trigger: Contamination on active surface
Failure: Reduced sensitivity and measurement errors
Mitigation: Clean room assembly, protective coatings, regular maintenance

Industrial Ecosystem

Compatible With

Interchangeable Parts

Compliance & Inspection

Tolerance
±5% responsivity variation, ±2 nm spectral response shift
Test Method
IEC 60747-5 for electrical characteristics, ISO 10110-8 for optical parameters, dark current measurement at specified bias voltage

Buyer Feedback

★★★★☆ 4.5 / 5.0 (34 reviews)

"Impressive build quality. Especially the technical reliability is very stable during long-term operation."

"As a professional in the Computer, Electronic and Optical Product Manufacturing sector, I confirm this Photodiode elements meets all ISO standards."

"Standard OEM quality for Computer, Electronic and Optical Product Manufacturing applications. The Photodiode elements arrived with full certification."

Related Components

Memory Module
Memory module for Industrial IoT Gateway data storage and processing
Storage Module
Industrial-grade storage module for data logging and firmware in IoT gateways
Ethernet Controller
Industrial Ethernet controller for real-time data transmission in Industrial IoT Gateways.
Serial Interface
Serial interface for industrial data transmission between IoT gateways and legacy equipment using RS-232/422/485 protocols.

Frequently Asked Questions

What is the difference between PIN and avalanche photodiodes?

PIN photodiodes have an intrinsic region between p and n layers for better quantum efficiency, while avalanche photodiodes (APDs) use internal gain through impact ionization for higher sensitivity but require precise voltage control.

How does temperature affect photodiode performance?

Temperature increases dark current (approximately doubling every 10°C) and can shift spectral response. Thermal management is critical for precision applications.

Can I contact factories directly?

Yes, each factory profile provides direct contact information.

Get Quote for Photodiode elements

Photodiode Element Photosensitive Detector