Power Output Stage
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This page explains how Power Semiconductor is classified within Computer, Electronic and Optical Product Manufacturing. Technical values and manufacturer relationships are research references; confirm the current specification and supplier evidence for each order.
A semiconductor device designed to handle high power levels, used as a switching or amplifying element in power electronic circuits.
Technical details and manufacturing context for Power Semiconductor
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Rated Voltage (VDS) | 600–1200 V | Exceeding may cause breakdownIEC 60747 |
| Rated Current (ID) | 50–600 A | Continuous current at Tc=100°CIEC 60747 |
| Switching Frequency | 2–20 kHz | Higher for MOSFET, lower for IGBT |
| On-Resistance (RDS(on)) | 0.1–10 mΩ | Lower reduces conduction lossIEC 60747 |
| Junction Temperature Range | -40–150 °C | Exceeding reduces lifetimeIEC 60747 |
| Isolation Voltage | 2500–4000 V AC | Module to baseplateIEC 60747 |
| Power Dissipation (Ptot) | 100–1000 W | At Tc=25°CIEC 60747 |
| Thermal Resistance (Rth(j-c)) | 0.05–0.5 K/W | Lower is better for heat transferIEC 60747 |
| Operating Temperature Range | -40–85 °C | Ambient temperatureIEC 60721-3-3 |
| Humidity Range | 5–95 % RH | Non-condensingIEC 60721-3-3 |
| Ingress Protection (IP) Rating | IP54–IP65 | For module housingIEC 60529 |
| Module Dimensions (L×W×H) | 62×108×30–110×150×40 mm | Typical package sizes |
| Weight | 100–500 g | Depends on package |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is essential for the following industrial systems and equipment:
| power: | Up to several megawatts switching capability |
| current: | Up to 3600A (collector current), 10A-1200A typical range |
| voltage: | Up to 6500V (blocking voltage), 600V-1700V typical for industrial applications |
| temperature: | -40°C to +150°C (junction temperature), -55°C to +125°C (storage temperature) |
| switching frequency: | Up to 100kHz for IGBTs, Up to 1MHz+ for MOSFETs |
Indicative industry ranges for design and RFQ preparation. Confirm the exact figures and applicable standard with the manufacturer before specifying.
Quoted from the published standard.
5 companies list this product among what they make. Company figures are quoted from each company's own website; every card states where the relationship came from.
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A practical evidence checklist for RFQ preparation and supplier evaluation.
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According to the directory reference, rated voltage (VDS) typically ranges from 600 to 1200 V, and rated current (ID) from 50 to 600 A at Tc=100°C. These values are indicative and must be confirmed with the specific model's datasheet.
On-resistance (RDS(on)) affects conduction losses. Lower values reduce power loss and heat generation. The reference range is 0.1 to 10 mΩ, but actual values depend on the device type and rating.
The directory references IEC 60747 for electrical parameters and IEC 60721-3-3 for environmental conditions. These standards serve as verification references; compliance must be confirmed with the manufacturer.
Common materials include silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) for the semiconductor die, along with copper and aluminum for interconnects, ceramic substrates for insulation, and encapsulation resin for protection.
Editorial classification, named public sources where available, and source-reviewed manufacturer records.
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