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This page explains how Power MOSFET Array is classified within Computer, Electronic and Optical Product Manufacturing. Technical values and manufacturer relationships are research references; confirm the current specification and supplier evidence for each order.
A collection of multiple Power MOSFETs integrated into a single package or circuit arrangement.
Technical details and manufacturing context for Power MOSFET Array
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Drain-Source Voltage (VDS) | 30–100 V | Maximum voltage between drain and source |
| Continuous Drain Current (ID) | 5–50 A | At 25°C case temperature |
| Power Dissipation (PD) | 2–150 W | Maximum power dissipation per package |
| On-Resistance (RDS(on)) | 5–100 mΩ | At VGS = 10V, ID = rated current |
| Gate Threshold Voltage (VGS(th)) | 1–4 V | At ID = 250µA |
| Operating Temperature Range | -55–150 °C | Junction temperature range |
| Input Capacitance (Ciss) | 500–5000 pF | At VDS = 25V, VGS = 0V, f = 1MHz |
| Switching Frequency | 100–1000 kHz | Typical maximum for hard-switching applications |
| Package Type | SOIC-8, SOIC-16, DIP-8, DIP-16 | Common package options |
| Number of Channels | 2–8 | Number of MOSFETs in the array |
| ESD Rating (HBM) | 2000–8000 V | Human Body ModelIEC 61340-3-1 |
| Weight | 0.1–2.0 g | Typical package weight |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
Commonly used trade names and technical identifiers for Power MOSFET Array.
This component is essential for the following industrial systems and equipment:
| current: | Up to 200A (continuous drain current) |
| voltage: | Up to 1000V (drain-source breakdown voltage) |
| temperature: | -55°C to +175°C (junction temperature) |
| power dissipation: | Up to 300W (depending on package and cooling) |
| switching frequency: | Up to 1MHz (depending on device characteristics) |
Indicative industry ranges for design and RFQ preparation. Confirm the exact figures and applicable standard with the manufacturer before specifying.
Quoted from the published standard.
Manufacturer profiles associated with Power MOSFET Array.
Manufacturer listings support early research and capability understanding. They are not certification, ranking, or transaction guarantees.
A practical evidence checklist for RFQ preparation and supplier evaluation.
CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.
According to the directory reference, the number of channels typically ranges from 2 to 8. However, the exact count depends on the specific model, so verify with the manufacturer.
The directory lists power dissipation ranging from 2 to 150 watts per package. This value is a reference range; actual power dissipation depends on the specific device and operating conditions.
Common package options include SOIC-8, SOIC-16, DIP-8, and DIP-16. The actual package type varies by model, so confirm with the supplier.
The ESD rating (Human Body Model) is listed as 2000 to 8000 volts, according to IEC 61340-3-1. This is a reference range; the specific rating for a particular part should be verified with the manufacturer.
Editorial classification, named public sources where available, and source-reviewed manufacturer records.
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