This page explains how Precision LED Chip Carrier is classified within Manufacture of Lighting Equipment. Technical values and manufacturer relationships are research references; confirm the current specification and supplier evidence for each order.
Mechanical substrate for mounting and thermally managing individual LED semiconductor dies
Technical details and manufacturing context for Precision LED Chip Carrier
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Thermal ConductivityRequired | 170–230 W/m·K | Material's ability to conduct heatASTM E1461 |
| Coefficient of Thermal ExpansionRequired | 6–8 ppm/K | Dimensional change with temperature, matched to LED dieASTM E831 |
| Maximum Operating TemperatureRequired | 150–200 °C | Continuous safe operating temperature limit |
| Surface FlatnessRequired | ≤0.05 µm | Deviation from perfect planar surface for die bondingISO 1101 |
| Trace Resistance | 0.5–2.0 mΩ | Electrical resistance of conductive pathsIPC-2221 |
| Die Shear Strength | ≥5 MPa | Bond strength between carrier and attached dieMIL-STD-883 |
| Substrate Material | AlN, Al2O3, Si3N4 | AlN offers highest thermal conductivity. |
| Dimensions | 3.5×3.5–5.0×5.0 mm | Custom sizes available on request. |
| Thickness | 0.5–1.0 mm | Affects thermal resistance and mechanical strength. |
| Breakdown Voltage | ≥1000 V DC | Prevents electrical failure at high voltages.IEC 60112 |
| Insulation Resistance | ≥10^10 Ω | Ensures no leakage current between traces.IEC 60167 |
| Humidity Resistance | 85°C/85%RH, 1000h | No corrosion or delamination after test.IEC 60068-2-78 |
| Weight | 0.1–0.5 g | Lightweight for portable applications. |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
| pressure: | Atmospheric to 1.5 MPa (for hermetic sealing applications) |
| temperature: | -40°C to +150°C (operating), up to +300°C (peak during soldering) |
| flatness tolerance: | ≤10 μm across mounting surface |
| thermal resistance: | 0.5-5 K/W (junction-to-case, depending on design) |
Indicative industry ranges for design and RFQ preparation. Confirm the exact figures and applicable standard with the manufacturer before specifying.
Quoted from the published standard.
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It provides a mechanical substrate for mounting individual LED semiconductor dies, ensuring electrical connectivity, thermal dissipation, and mechanical protection within an LED assembly.
The carrier is available in Aluminum Nitride (AlN) ceramic or Copper-Molybdenum-Copper (CMC) composite, each offering specific thermal and mechanical properties.
Thermal conductivity ranges from 170 to 230 W/m·K, and the coefficient of thermal expansion is 6–8 ppm/K, matched to the LED die to minimize stress.
The listed values are reference ranges. You must confirm model-specific values and standards with the legal manufacturer or supplier before integration.
Commonly used trade names and technical identifiers for Precision LED Chip Carrier.
Editorial classification, named public sources where available, and source-reviewed manufacturer records.
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