Wire Bonder
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This page explains how Bond Head is classified within Computer, Electronic and Optical Product Manufacturing. Technical values and manufacturer relationships are research references; confirm the current specification and supplier evidence for each order.
The precision mechanism in a wire bonder that performs the actual wire bonding operation.
Technical details and manufacturing context for Bond Head
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Bonding Force | 10–150 gf | Force applied to the wire during bonding; too low causes weak bonds, too high damages the die. |
| Ultrasonic Power | 0.5–5 W | Ultrasonic energy for scrubbing; insufficient power leads to poor intermetallic formation. |
| Bonding Time | 10–100 ms | Duration of ultrasonic application; too short results in incomplete bonding. |
| Wire Diameter Range | 15–50 µm | Acceptable wire diameters; outside range may cause feeding or clamping issues. |
| Bonding Accuracy | ±5 µm | Positional accuracy of bond placement; critical for fine-pitch devices. |
| Z-Axis Stroke | 10–20 mm | Vertical travel range; must accommodate package height variations. |
| Operating Temperature | 15–35 °C | Ambient temperature range for stable operation; outside may affect accuracy. |
| Relative Humidity | 30–70 % RH | Non-condensing; high humidity can cause corrosion, low humidity static issues. |
| Supply Voltage | 24 ±10% V DC | DC supply for actuators and sensors; deviation may cause erratic operation. |
| Air Supply Pressure | 0.4–0.6 MPa | Pneumatic supply for clamping and damping; below 0.4 MPa reduces force control. |
| Weight | 1.5–3.5 kg | Mass of the bond head; affects dynamic response and machine stability. |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
Commonly used trade names and technical identifiers for Bond Head.
This component is essential for the following industrial systems and equipment:
| pressure: | 0.5-2.0 N (bond force range) |
| other spec: | Positioning accuracy: ±1.5 μm, Bond cycle time: 50-200 ms |
| temperature: | 20-40°C (operating ambient) |
Indicative industry ranges for design and RFQ preparation. Confirm the exact figures and applicable standard with the manufacturer before specifying.
Quoted from the published standard.
Manufacturer profiles associated with Bond Head.
Manufacturer listings support early research and capability understanding. They are not certification, ranking, or transaction guarantees.
A practical evidence checklist for RFQ preparation and supplier evaluation.
CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.
The bond head is the precision mechanism that positions and manipulates the bonding tool to form electrical interconnections between semiconductor chips and their packages. It executes the wire bonding process by applying controlled force, ultrasonic energy, and heat as needed.
Common materials include stainless steel, ceramic, and tungsten carbide. These materials provide rigidity, wear resistance, and thermal stability required for precise bonding operations.
Key parameters include bonding force, ultrasonic power, bonding time, wire diameter range, bonding accuracy, Z-axis stroke, operating temperature, relative humidity, supply voltage, air supply pressure, and weight. These are reference ranges; verify with the manufacturer for your specific application.
Signals include inconsistent bond strength, positional drift, unusual vibrations, or visible wear on the bonding tool. Regular calibration and inspection are recommended to maintain performance.
Editorial classification, named public sources where available, and source-reviewed manufacturer records.
Ask for use case, specification boundaries, supplier type, and RFQ preparation information for this product.
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