Editorial Technical Reference

Clock Data Recovery (CDR) Circuit

This page explains how Clock Data Recovery (CDR) Circuit is classified within Computer, Electronic and Optical Product Manufacturing. Technical values and manufacturer relationships are research references; confirm the current specification and supplier evidence for each order.

Technical Definition & Core Assembly

A circuit that extracts timing information from a data stream to synchronize the receiver's clock with the transmitter's clock.

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Product Specifications

Technical details and manufacturing context for Clock Data Recovery (CDR) Circuit

Definition
A Clock Data Recovery (CDR) circuit is a component used in high-speed serial communication systems. It is typically integrated into a Protocol PHY (Physical Layer) Chip, where it performs the critical function of recovering the clock signal embedded in incoming serial data streams. In many serial links, the data is transmitted without a separate clock line; instead, the clock is encoded within the data transitions. The CDR circuit analyzes these transitions to generate a local clock that is phase-aligned with the incoming data. This recovered clock is then used to sample the data at the optimal point in the bit period, ensuring accurate data recovery and synchronization between the transmitter and receiver. The circuit operates over a data rate range of 1 to 12.5 Gbps, supporting common serial standards. It requires a supply voltage of 1.8 to 3.3 V, with power consumption ranging from 50 to 250 mW depending on data rate and process technology. Key performance parameters include jitter tolerance of 0.5 to 1.0 UI at a bit error rate (BER) less than 1e-12, jitter generation of 0.1 to 0.3 UI rms (peak-to-peak less than 0.6 UI), and acquisition time from power-on of 1 to 10 ms. The circuit is designed for industrial-grade operation over a temperature range of -40 to 85 °C. It features differential input with sensitivity of 10 to 50 mV and programmable differential output swing of 200 to 800 mV. The input frequency range is continuous from 0.1 to 12.5 GHz. The device is available in a QFN-32 package, with other packages on request. It has an ESD rating of 2 to 4 kV (HBM) per IEC 61000-4-2. The CDR circuit is fabricated on a silicon semiconductor substrate. These specifications are directory reference ranges; actual values must be confirmed with the legal manufacturer for the specific model and application.
Working Principle
The CDR circuit operates by analyzing transitions in the incoming data stream. It typically uses a phase-locked loop (PLL) or a delay-locked loop (DLL) to generate a local clock signal. The circuit detects data edges and compares their phase with the local clock. Any phase difference is used to adjust the frequency and phase of the local oscillator, aligning it with the incoming data. Once locked, the recovered clock is used to sample the data at the center of each bit period, minimizing bit errors. The circuit continuously monitors the data stream to maintain synchronization, even during long runs of identical bits, using techniques such as frequency tracking and data transition density monitoring.
Common Materials
Silicon (Semiconductor Substrate)
Technical Parameters
ParameterTypical rangeNotes & selection driver
Data Rate1–12.5 GbpsSupports common serial standards
Supply Voltage1.8–3.3 VSingle or dual supply options
Power Consumption50–250 mWDepends on data rate and process
Jitter Tolerance0.5–1.0 UIAt BER < 1e-12
Jitter Generation0.1–0.3 UI rmsPeak-to-peak < 0.6 UI
Acquisition Time1–10 msLock time from power-on
Operating Temperature-40–85 °CIndustrial grade
Input Sensitivity10–50 mVDifferential input
Output Swing200–800 mVDifferential, programmable
Package TypeQFN-32Other packages on request
ESD Rating2–4 kVHBMIEC 61000-4-2
Input Frequency Range0.1–12.5 GHzContinuous

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Components / BOM
  • Phase Detector
    Compares the phase of the incoming data edges with the recovered clock to generate an error signal.
    Material: Semiconductor (Transistors)
  • Voltage-Controlled Oscillator (VCO) or Digitally Controlled Oscillator (DCO)
    Generates the local clock signal whose frequency is adjusted based on the phase error signal.
    Material: Semiconductor (Inductors, Capacitors, Transistors)
  • Loop Filter Part
    Filters the phase error signal to control the dynamics (bandwidth, stability) of the recovery loop.
    Material: Semiconductor (Resistors, Capacitors)

Applied To / Applications

This component is essential for the following industrial systems and equipment:

Industrial Ecosystem & Supply Chain Structure

Complementary Systems
Downstream Applications
Specialized Tooling

Application Fit & Sizing Matrix

Operational Limits
voltage: 1.8V to 3.3V supply range
data rate: 1 Mbps to 10 Gbps
temperature: -40°C to +125°C (industrial grade)
jitter tolerance: ±0.5 UI peak-to-peak
Media Compatibility
✓ fiber optic communication systems ✓ high-speed serial data links (e.g., PCIe, SATA) ✓ wireless baseband processing units
Unsuitable: high electromagnetic interference (EMI) environments without proper shielding
Sizing Data Required
  • data rate (bps)
  • jitter specification (UI or ps)
  • power supply voltage (V)

Reliability & Engineering Risk Analysis

Failure Mode & Root Cause
Phase-lock failure
Cause: Voltage-controlled oscillator (VCO) drift due to temperature fluctuations or aging components, causing loss of synchronization with incoming data signal.
Jitter accumulation
Cause: Poor signal integrity from electromagnetic interference (EMI), power supply noise, or degraded transmission lines, leading to timing errors and data corruption.
Maintenance Indicators
  • Increased bit error rate (BER) or intermittent data loss in system logs
  • Abnormal temperature readings or audible high-frequency whine from oscillator components
Engineering Tips
  • Implement active thermal management with heatsinks or controlled airflow to stabilize VCO performance and reduce temperature-induced drift.
  • Use shielded cabling, proper grounding, and power supply filtering to minimize EMI and noise that degrade signal integrity and increase jitter.

Indicative industry ranges for design and RFQ preparation. Confirm the exact figures and applicable standard with the manufacturer before specifying.

Compliance & Manufacturing Standards

Applicable Standards
CE Marking (EU Directive 2014/35/EU Low Voltage Directive)

Quoted from the published standard.

Manufacturing Precision
  • Jitter Tolerance: +/- 0.1 UI (Unit Interval)
  • Frequency Lock Range: +/- 100 ppm (parts per million)
Quality Inspection
  • Bit Error Rate Test (BERT)
  • Jitter Transfer Function Measurement

Manufacturers of Clock Data Recovery (CDR) Circuit

Manufacturer profiles associated with Clock Data Recovery (CDR) Circuit.

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Frequently Asked Questions

What is the primary function of a CDR circuit?

The primary function is to recover the clock signal from an incoming serial data stream, allowing the receiver to sample data accurately and synchronize with the transmitter.

What data rates does this CDR circuit support?

It supports data rates from 1 to 12.5 Gbps, covering common serial standards. The exact rate must be confirmed for the specific model.

What is the typical power consumption?

Power consumption ranges from 50 to 250 mW, depending on the data rate and process technology. Refer to the manufacturer's datasheet for precise values.

What is the operating temperature range?

The circuit is rated for industrial-grade operation from -40 to 85 °C. Always verify the temperature range for your application with the supplier.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records.

Preliminary Technical Classification
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