Sensor Module
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This page explains how Photodetector is classified within Computer, Electronic and Optical Product Manufacturing. Technical values and manufacturer relationships are research references; confirm the current specification and supplier evidence for each order.
A device that converts light signals into electrical signals for detection and measurement.
Technical details and manufacturing context for Photodetector
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Spectral Range | 400–1100 nm | Silicon-based; covers visible to near-infrared |
| Peak Sensitivity Wavelength | 900–950 nm | Typical for Si photodiodes |
| Responsivity | 0.4–0.6 A/W | At peak wavelength |
| Dark Current | 0.1–10 nA | At 10 V reverse bias, 25°C |
| Rise Time | 10–100 ns | At 50 Ω load, 5 V bias |
| Active Area Diameter | 0.3–10 mm | Larger area increases capacitance |
| Capacitance | 10–100 pF | At 0 V bias; affects speed |
| Operating Temperature | -40–85 °C | Extended range available |
| Storage Temperature | -55–125 °C | Non-operating |
| Reverse Breakdown Voltage | 30–200 V | Minimum |
| Noise Equivalent Power (NEP) | 1e-14–1e-12 W/√Hz | At peak wavelength, 25°C |
| Package Type | TO-5, TO-8, SMD | Hermetic options available |
| Weight | 1–10 g | Depends on package |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is essential for the following industrial systems and equipment:
| pressure: | Atmospheric to 2 bar |
| temperature: | -40°C to +85°C |
| response time: | 1 ns to 100 ms |
| wavelength range: | 190 nm to 1100 nm |
Indicative industry ranges for design and RFQ preparation. Confirm the exact figures and applicable standard with the manufacturer before specifying.
Quoted from the published standard.
Manufacturer profiles associated with Photodetector.
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A practical evidence checklist for RFQ preparation and supplier evaluation.
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For silicon-based photodetectors, the spectral range is typically 400–1100 nm, covering visible to near-infrared wavelengths. The peak sensitivity is usually around 900–950 nm. These are reference values; the exact range depends on the specific model and should be confirmed with the manufacturer.
Dark current is the small current that flows even in the absence of light, due to thermally generated carriers. It sets a lower limit on detectable light levels and contributes to noise. For the photodetectors in this directory, dark current is typically 0.1–10 nA at 10 V reverse bias and 25°C. Lower dark current is generally better for low-light applications.
Response speed is characterized by rise time, which is typically 10–100 ns for these devices at 50 Ω load and 5 V bias. It is influenced by the carrier transit time, the capacitance of the device, and the load impedance. Larger active area increases capacitance, which can slow the response. Operating at higher reverse bias can reduce capacitance and improve speed.
Common package types include TO-5, TO-8, and SMD (surface-mount device). Hermetic options are available for harsh environments. The package affects mounting, optical access, and thermal performance. Weight ranges from 1–10 g depending on package. Choose a package that suits your assembly process and environmental requirements.
Editorial classification, named public sources where available, and source-reviewed manufacturer records.
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