Plasma Source for Semiconductor Processing

Product Specifications

Technical details and manufacturing context for Plasma Source

Definition

The Plasma Source is a component used in semiconductor manufacturing equipment. It produces ionized gas (plasma) that is applied in processes such as etching, deposition, cleaning, and surface modification on semiconductor wafers. The device precisely controls plasma density, uniformity, and energy to enable nanoscale fabrication. It operates by applying electromagnetic energy—radio frequency (RF), microwave, or direct current (DC)—to a gas within a vacuum chamber, ionizing the gas molecules to create a reactive plasma containing ions, electrons, and neutral species that interact with the wafer surface. The plasma source is typically integrated into etch or deposition tools, where it must match the process requirements for power, frequency, gas flow, and pressure. Key parameters include RF power (300–3000 W), RF frequency (13.56 MHz, per IEC 60063), operating pressure (1.0–1.6 MPa), gas flow rate (10–500 sccm), matching impedance (50 Ω, per IEC 60063), power stability (±1%), cooling water flow (5–20 L/min), cooling water temperature (15–25 °C), operating temperature (5–40 °C), relative humidity (20–80% non-condensing), input voltage (200–240 V AC, per IEC 60038), input frequency (50–60 Hz, per IEC 60038), weight (15–25 kg), and dimensions (300×400×200 mm). Materials used include quartz, aluminum, stainless steel, and ceramics. These values are reference ranges and must be verified for the specific model and application. The plasma source is a critical component in semiconductor fabrication, and its performance directly affects process yield and device quality. Proper selection requires consideration of the process chemistry, wafer size, and desired etch or deposition rates. Verification of specifications with the legal manufacturer or supplier is essential before procurement or integration.

Working Principle

The plasma source generates plasma by applying electromagnetic energy (RF, microwave, or DC) to a gas within a vacuum chamber. The energy ionizes the gas molecules, creating a reactive plasma containing ions, electrons, and neutral species. These particles interact with the semiconductor surface to perform processes such as etching, deposition, or cleaning. The source controls plasma density, uniformity, and energy by adjusting parameters like RF power, gas flow rate, and chamber pressure. This enables precise nanoscale fabrication.

Common Materials

Quartz, Aluminum, Stainless Steel, Ceramics

Technical Parameters

Parameter	Typical range	Notes & selection driver
RF Power	300–3000 W	Determines plasma density and etch/deposition rate
RF Frequency	13.56 MHz	Standard industrial frequency for plasma processingIEC 60063
Gas Flow Rate	10–500 sccm	Controls plasma chemistry and uniformity
Matching Impedance	50 Ω	Standard RF system impedanceIEC 60063
Power Stability	±1 %	Ensures process repeatability
Cooling Water Flow	5–20 L/min	Required for thermal management
Cooling Water Temperature	15–25 °C	Maintains stable operation
Operating Temperature	5–40 °C	Ambient temperature range
Relative Humidity	20–80 %	Non-condensing
Input Voltage	200–240 V AC	Single phaseIEC 60038
Input Frequency	50–60 Hz	Auto-switchingIEC 60038
Weight	15–25 kg	Depends on configuration
Dimensions (W×D×H)	300×400×200 mm	Typical rack-mount size

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Components / BOM

RF Matching Network
Matches impedance between RF generator and plasma load for efficient power transfer

Material: Copper, Ceramics
Electrode
Applies electromagnetic field to ionize gas and sustain plasma discharge

Material: Aluminum, Stainless Steel
Gas Distribution System
Controls and distributes process gases uniformly into the plasma chamber

Material: Stainless Steel, Quartz
Cooling System
Removes heat generated during plasma operation to maintain stable performance

Material: Copper, Aluminum

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for Plasma Source.

Applied To / Applications

This component is essential for the following industrial systems and equipment:

Semiconductor Manufacturing Equipment

View system integration details

Manufacturers of Plasma Source

Manufacturer profiles associated with Plasma Source.

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Frequently Asked Questions

What is the typical RF power range for this plasma source?

The reference RF power range is 300–3000 W, but the exact value depends on the specific model and process requirements. Always verify with the manufacturer.

Which standards are referenced for the electrical parameters?

The RF frequency and matching impedance reference IEC 60063, and the input voltage and frequency reference IEC 60038. These are procurement references, not certifications.

What materials are used in the construction?

The materials on file include quartz, aluminum, stainless steel, and ceramics. Specific grades are not listed and must be confirmed with the supplier.

How should I verify the operating pressure specification?

The operating pressure range is 1.0–1.6 MPa. However, this is a reference range; confirm the actual requirement for your application with the manufacturer.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records.

Preliminary Technical Classification

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pressure:	1 mTorr - 10 Torr
flow rate:	10-1000 sccm
frequency:	13.56 MHz or 2.45 GHz
power range:	100-5000 W
temperature:	20-400°C

Plasma Source

Product Specifications

Industry Taxonomies & Aliases

Applied To / Applications

Industrial Ecosystem & Supply Chain Structure

Application Fit & Sizing Matrix

Reliability & Engineering Risk Analysis

Compliance & Manufacturing Standards