Power Semiconductor Assembly
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This page explains how Power Semiconductor Devices (IGBTs/SCRs) is classified within Computer, Electronic and Optical Product Manufacturing. Technical values and manufacturer relationships are research references; confirm the current specification and supplier evidence for each order.
Power semiconductor components (IGBTs/SCRs) for high-voltage, high-current switching and control in industrial applications.
Technical details and manufacturing context for Power Semiconductor Devices (IGBTs/SCRs)
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Collector-Emitter Voltage (V_CE) | 600–6500 V | Maximum blocking voltage ratingIEC 60747-9 |
| Collector Current (I_C) | 10–3600 A | Continuous DC current ratingIEC 60747-9 |
| Switching Frequency | 1–100 kHz | Typical range for IGBTs |
| Saturation Voltage (V_CE(sat)) | 1.5–3.2 V | At rated current and 25°CIEC 60747-9 |
| Gate Threshold Voltage (V_GE(th)) | 3–6 V | Minimum gate voltage for turn-onIEC 60747-9 |
| Operating Temperature Range | -40–150 °C | Junction temperature rangeIEC 60747-9 |
| Thermal Resistance (Junction-to-Case) | 0.05–1.5 K/W | Lower is better for heat dissipationIEC 60747-9 |
| Isolation Voltage | 2500–6000 V RMS | Between terminals and base plateIEC 60747-9 |
| Power Dissipation (P_tot) | 100–2000 W | Maximum allowable at 25°C case temperatureIEC 60747-9 |
| Short Circuit Withstand Time | 10–20 µs | Typical for IGBTsIEC 60747-9 |
| Package Type | TO-247–IHM-B | Common packages for high powerIEC 60747-9 |
| Weight | 5–500 g | Depends on package and current rating |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
Commonly used trade names and technical identifiers for Power Semiconductor Devices (IGBTs/SCRs).
This component is essential for the following industrial systems and equipment:
| pressure: | Atmospheric to 1 atm (hermetic packages), vacuum compatible in sealed units |
| temperature: | -40°C to +150°C (junction temperature), -55°C to +125°C (storage) |
| current rating: | 10A to 3600A (module ratings) |
| voltage rating: | 600V to 6500V (typical IGBT/SCR ranges) |
| switching frequency: | Up to 50kHz (IGBTs), 1-10kHz (SCRs typical) |
Indicative industry ranges for design and RFQ preparation. Confirm the exact figures and applicable standard with the manufacturer before specifying.
Quoted from the published standard.
4 companies list this product among what they make. Company figures are quoted from each company's own website; every card states where the relationship came from.
Manufacturer listings support early research and capability understanding. They are not certification, ranking, or transaction guarantees.
A practical evidence checklist for RFQ preparation and supplier evaluation.
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According to the directory, these components have a maximum blocking voltage rating (collector-emitter voltage) of 600–6500 V and a continuous DC current rating (collector current) of 10–3600 A. These are reference ranges; the actual ratings depend on the specific model and must be confirmed with the manufacturer.
The junction temperature range is -40°C to 150°C, as listed in the parameters. This indicates the allowable temperature for the semiconductor junction during operation. Always verify the thermal limits for your specific application.
The parameters are referenced to IEC 60747-9, which covers semiconductor devices for power applications. This standard is a procurement reference; it does not guarantee that a specific product is certified or compliant. Always check with the manufacturer for compliance details.
The materials on file include silicon, copper, aluminum, ceramic substrates, and epoxy molding compounds. These materials are typical for power semiconductor packaging and thermal management. Specific material grades may vary by manufacturer and model.
Editorial classification, named public sources where available, and source-reviewed manufacturer records.
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