Schottky Diode: Reverse Voltage (VR) 20-100V

Q: Why use Schottky diodes in DC-DC converters instead of standard diodes?

Schottky diodes have lower forward voltage drop and faster switching speeds, reducing power losses and improving converter efficiency, especially in high-frequency switching applications.

Q: What are the limitations of Schottky diodes?

They typically have lower reverse voltage ratings and higher reverse leakage current compared to p-n junction diodes, making them unsuitable for high-voltage applications.

Q: How to select a Schottky diode for a DC-DC converter?

Consider forward voltage drop, reverse voltage rating, forward current capacity, switching speed, thermal characteristics, and package size based on converter topology and operating conditions.

Component Specifications

Definition

A Schottky diode is a metal-semiconductor junction diode formed by the contact between a metal and a semiconductor material (typically n-type silicon or gallium arsenide). Unlike conventional p-n junction diodes, it operates on the principle of the Schottky barrier, resulting in a lower forward voltage drop (typically 0.15-0.45V) and extremely fast switching speeds due to the absence of minority carrier storage effects. In DC-DC converters, it is primarily used for output rectification, freewheeling, and reverse polarity protection to improve efficiency and reduce power losses.

Working Principle

The working principle is based on the Schottky barrier formed at the metal-semiconductor interface. When forward-biased, electrons from the semiconductor overcome the barrier and flow into the metal, allowing current with minimal voltage drop. Under reverse bias, the barrier prevents significant current flow until the breakdown voltage is reached. The absence of minority carrier recombination enables rapid transition between conducting and non-conducting states.

Materials

Metal: Platinum, Tungsten, or Molybdenum; Semiconductor: N-type Silicon (Si) or Gallium Arsenide (GaAs); Package: SOD-123, SMA, SMB, or D2PAK with epoxy encapsulation.

Technical Parameters

Parameter	Typical range	Notes & selection driver
Package Type	Surface Mount (SMD) or Through-Hole
Forward Voltage (VF)	0.15-0.45V at rated current
Reverse Voltage (VR)	20-100V
Junction Temperature (Tj)	-65°C to +150°C
Reverse Recovery Time (trr)	<10ns
Maximum Forward Current (IF)	1-30A

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards

IEC 60747, JEDEC JESD22, MIL-PRF-19500

Parent Products

This component is used in the following industrial products

DC-DC Converter

An electronic circuit that converts a source of direct current (DC) from one voltage level to another.

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Engineering Analysis

Risks & Mitigation

Thermal runaway due to high reverse leakage current at elevated temperatures
Voltage overshoot during fast switching causing potential breakdown
Incompatibility with high-voltage applications (>200V)
Sensitivity to electrostatic discharge (ESD) during handling

FMEA Triads

Trigger: Exceeding maximum junction temperature
Failure: Thermal degradation leading to increased leakage current or catastrophic failure
Mitigation: Implement proper heat sinking, derate current at high temperatures, and monitor thermal management

Trigger: Voltage transients exceeding reverse voltage rating
Failure: Reverse breakdown and permanent damage
Mitigation: Use snubber circuits, select diodes with appropriate voltage margins, and implement overvoltage protection

Trigger: Improper soldering or mechanical stress
Failure: Cracked package or broken bond wires causing open circuit
Mitigation: Follow manufacturer's soldering guidelines, use stress-relief in PCB design, and conduct visual inspections

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance

Forward voltage tolerance ±10%, reverse leakage current <100µA at rated voltage

Test Method

IEC 60747-1 for semiconductor devices, including forward voltage test at specified current, reverse leakage test, and switching speed measurement using pulse generators

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation

Request current drawings, revision history, and a signed specification sheet.

Manufacturing capability

Verify equipment lists, process limits, capacity, and representative production evidence.

Inspection readiness

Confirm test methods, calibrated equipment, sampling plans, and traceable reports.

Supplier transparency

Check the legal entity, factory address, ownership, certifications, and direct contacts.

CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.

Manufacturers of Schottky Diode

6 companies list this product among what they make. Company figures are quoted from each company's own website; every card states where the relationship came from.

Greegoo Electric

Zhejiang, CN

Also makes: Current Transformer (CT), Semiconductor Device, Power Semiconductor and 9 more